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光譜分析
來源: | 作者: | 發布時間:2013-9-22 14:12:21


電光聚合物在全光技術實現THz波產生與檢測中的研究進展

Progress of Electro-Optic Polymer in the Field of Generation and Detection of Terahertz Waves by All-Optical Technique

摘要:
研究和開發基于超短波和低能量激光系統的高振幅、寬頻帶的太赫茲系統一直是太赫茲應用領域的一個熱點。與傳統電光晶體材料相比,以電光聚合物薄膜作為太赫茲波產生和檢測的最大的優勢在于:一方面電光聚合物不具有晶格結構相應的不存在聲子的吸收和太赫茲折射率的散射問題,避免光譜間隙的產生;另一方面電光聚合物薄膜與已用于寬頻太赫茲系統中的超薄電光晶體材料相比,更易于加工和處理。另外,可以自行設計得到低相位失配和高電光系數的電光聚合物材料,得到高效率和寬頻帶的太赫茲輻射源?梢灶A見,電光聚合物在這一領域的應用必將有寬闊的發展空間和學術研究意義。介紹電光聚合物的電光效應及二階非線性生色團合成等相關理論問題基礎上,綜述了近二十多年來,電光聚合物在基于全光技術實現太赫茲波產生與檢測系統中的研究進展,主要包括:摻鈦藍寶石飛秒激光激發下,共聚型和主客體型電光聚合物實現太赫茲波產生與檢測;光纖飛秒激光激發下,主客體型電光聚合物實現太赫茲波的產生與檢測。
Abstract:
Research on and development of the high amplitude,broadband terahertz system based on ultra-short pulse,low-pow-er laser system is a hot spot in the field of terahertz.So far,for all the reported THz bandwidths broader than 10 THz,there al-ways exist strong dispersion and absorption gaps associated with the lattice resonance in either the photoconductive materials or crystalline EO materials.If such THz sources and detectors are employed in spectroscopic studies,spectral information in these gaps cannot be extracted.One of the advantages of using amorphous electro-optic polymer films as THz emitters and sensors is that there is no dispersion or absorption resulting from the lattice resonance effect,making a gap-free THz spectrum possible. Another advantage of electro-optic polymer films is the ease of fabrication and handling,in contrast to the extremely thin crystal-line electro-optic materials used for existing broadband THz system.In addition,we can engineer the electro-optic polymeric ma-terials to achieve small phase mismatch and high electro-optic coefficients such that brightness and broad bandwidth of THz radi-ation can be obtained.In this thesis a theoretical description of electro-optic effect based on electro-optic polymer and the second-order nonlinear chromophores synthesis is reviewed.In the past 20 years,progress in electro-optic polymer in the field of genera-ting and detecting terahertz radiation by all-optical techniques is summarized,including the terahertz systems based on copolymer and the guest-host polymer induced by Titanium doped sapphire femtosecond laser and based on the guest-host polymer at com-munication wavelengths

國家青年自然科學基金項目,中國博士后基金項目


低溫鋁誘導晶化制備納米晶硅薄膜的物相和光學性能研究

Research on the Phase and Optical Properties of nc-Si Films Prepared by Low Temperature Aluminum Induced Crystallization

摘要:
采用射頻磁控濺射鍍膜系統,在玻璃襯底上制備了非晶硅(α-Si)/鋁(Al)復合薄膜,結合氮氣(N2)氣氛中低溫快速光熱退火制備了納米晶硅(nc-Si )薄膜;利用光學顯微鏡、共焦光學顯微儀、X 射線衍射(XRD)儀、拉曼散射光譜(Raman)儀和紫外-可見光-近紅外分光光度計(UV-VIS-NIR)對納米晶硅薄膜的表面形貌、物相及光學性能進行了表征,研究了退火工藝對薄膜性能的影響。結果表明:300℃,25 min光熱退火可使α-Si/Al膜晶化為納米晶硅薄膜,晶化率為15.56%,晶粒尺寸為1.75 nm;退火溫度從300℃逐漸升高到400℃,納米晶硅薄膜晶粒尺寸、晶化率、帶隙逐漸增加,表面均勻性、晶格畸變量逐漸減;退火溫度從400℃逐漸升高到500℃,納米晶硅薄膜的晶粒尺寸、晶化率繼續增加,帶隙則逐漸降低;采用納米晶硅薄膜的吸光模型驗證了所制備的納米晶硅薄膜的光學特性,其光學帶隙的變化趨勢與吸光模型得出的結果一致。
Abstract:
In the present paper,nanocrystalline silicon thin films on glass substrates were prepared by rapid thermal annealing (RTA)of RF magnetron sputtered system andα-Si/Al films at a low temperature in N2 atmosphere.Optical metallographic mi-croscope,confocal optical microscopy,X-ray diffractometer,Raman scattering and UV-Vis-NIR spectrometers were used to characterize the surface morphology and the phase and optical properties of nc-Si films.The influence of annealing process on the nc-Si films properties was studied.The results showed that nc-Si films were obtained after aluminum induced crystallization of theα-Si/Al films at 300 ℃,withthe crystallization rate 15. 56% and the grain size 1. 75 nm.The surface uniformity and lattice distortion of nc-Si films reduced,while grain size,degree of crystallization and the optical band gap of the films increased with increasing annealing temperature from 300 to 400 ℃.As the annealing temperature increased from 400 to 500 ℃,although the degree of crystallization and grain size increased,the tendencies of all other characteristics were opposite.On the contrary,the surface uniformity and the lattice distortion increased,but the optical band gap of nc-Si films reduced.The optical properties of the resulting films were confirmed by the absorption model of nc-Si thin films,where the tendency of band gap changes is in con-sistent with the optical modeling.

國家自然科學基金聯合基金項目

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